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Brand Name : original
Model Number : BAV21WS-HE3-18
Certification : original
Place of Origin : original
MOQ : 1
Price : negotiation
Payment Terms : T/T
Supply Ability : 100,000
Delivery Time : 1-3working days
Packaging Details : carton box
Technology : Standard
Voltage - DC Reverse (Vr) (Max) : 200 V
Current - Average Rectified (Io) : 250mA
Voltage - Forward (Vf) (Max) @ If : 1.25 V @ 200 mA
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50 ns
Current - Reverse Leakage @ Vr : 100 nA @ 200 V
Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz
AT91SAM7X512B-AU ARM7® SAM7X Microcontroller IC 16/32-Bit 55MHz 512KB FLASH
Specifications of BAV21WS-HE3-18
TYPE | DESCRIPTION |
Category | Discrete Semiconductor Products |
Diodes | |
Rectifiers | |
Single Diodes | |
Mfr | Vishay General Semiconductor - Diodes Division |
Series | Automotive, AEC-Q101 |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Product Status | Active |
Technology | Standard |
Voltage - DC Reverse (Vr) (Max) | 200 V |
Current - Average Rectified (Io) | 250mA |
Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 200 mA |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 50 ns |
Current - Reverse Leakage @ Vr | 100 nA @ 200 V |
Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | SC-76, SOD-323 |
Supplier Device Package | SOD-323 |
Operating Temperature - Junction | 150°C (Max) |
Base Product Number | BAV21 |
Features of BAV21WS-HE3-18
* Incorporates the ARM7TDMI ARM Thumb® Processor
- High-performance 32-bit RISC Architecture
- High-density 16-bit Instruction Set
- Leader in MIPS/Watt
- EmbeddedICE™ In-circuit Emulation, Debug Communication Channel Support
* Internal High-speed Flash
- 512 Kbytes (SAM7X512) Organized in Two Banks of 1024 Pages of 256 Bytes (Dual Plane)
- 256 Kbytes (SAM7X256) Organized in 1024 Pages of 256 Bytes (Single Plane)
- 128 Kbytes (SAM7X128) Organized in 512 Pages of 256 Bytes (Single Plane)
- Single Cycle Access at Up to 30 MHz in Worst Case Conditions
- Prefetch Buffer Optimizing Thumb Instruction Execution at Maximum Speed
- Page Programming Time: 6 ms, Including Page Auto-erase,Full Erase Time: 15 ms
- 10,000 Write Cycles, 10-year Data Retention Capability,Sector Lock Capabilities, Flash Security Bit
- Fast Flash Programming Interface for High Volume Production
* Internal High-speed SRAM, Single-cycle Access at Maximum Speed
- 128 Kbytes (SAM7X512)
- 64 Kbytes (SAM7X256)
- 32 Kbytes (SAM7X128)
Applications of BAV21WS-HE3-18
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
Environmental & Export Classifications of BAV21WS-HE3-18
ATTRIBUTE | DESCRIPTION |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.10.0070 |
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BAV21WS-HE3-18 Diode 200 V 250mA Surface Mount SOD-323 Images |