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BAV21WS-HE3-18 Diode 200 V 250mA Surface Mount SOD-323

SZ ADE Electronics Co., Ltd
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BAV21WS-HE3-18 Diode 200 V 250mA Surface Mount SOD-323

Brand Name : original

Model Number : BAV21WS-HE3-18

Certification : original

Place of Origin : original

MOQ : 1

Price : negotiation

Payment Terms : T/T

Supply Ability : 100,000

Delivery Time : 1-3working days

Packaging Details : carton box

Technology : Standard

Voltage - DC Reverse (Vr) (Max) : 200 V

Current - Average Rectified (Io) : 250mA

Voltage - Forward (Vf) (Max) @ If : 1.25 V @ 200 mA

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 50 ns

Current - Reverse Leakage @ Vr : 100 nA @ 200 V

Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz

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AT91SAM7X512B-AU ARM7® SAM7X Microcontroller IC 16/32-Bit 55MHz 512KB FLASH

Specifications of BAV21WS-HE3-18

TYPE DESCRIPTION
Category Discrete Semiconductor Products
Diodes
Rectifiers
Single Diodes
Mfr Vishay General Semiconductor - Diodes Division
Series Automotive, AEC-Q101
Package Tape & Reel (TR)
Cut Tape (CT)
Product Status Active
Technology Standard
Voltage - DC Reverse (Vr) (Max) 200 V
Current - Average Rectified (Io) 250mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V
Capacitance @ Vr, F 1.5pF @ 0V, 1MHz
Mounting Type Surface Mount
Package / Case SC-76, SOD-323
Supplier Device Package SOD-323
Operating Temperature - Junction 150°C (Max)
Base Product Number BAV21

Features of BAV21WS-HE3-18


* Incorporates the ARM7TDMI ARM Thumb® Processor
- High-performance 32-bit RISC Architecture
- High-density 16-bit Instruction Set
- Leader in MIPS/Watt
- EmbeddedICE™ In-circuit Emulation, Debug Communication Channel Support
* Internal High-speed Flash
- 512 Kbytes (SAM7X512) Organized in Two Banks of 1024 Pages of 256 Bytes (Dual Plane)
- 256 Kbytes (SAM7X256) Organized in 1024 Pages of 256 Bytes (Single Plane)
- 128 Kbytes (SAM7X128) Organized in 512 Pages of 256 Bytes (Single Plane)
- Single Cycle Access at Up to 30 MHz in Worst Case Conditions
- Prefetch Buffer Optimizing Thumb Instruction Execution at Maximum Speed
- Page Programming Time: 6 ms, Including Page Auto-erase,Full Erase Time: 15 ms
- 10,000 Write Cycles, 10-year Data Retention Capability,Sector Lock Capabilities, Flash Security Bit
- Fast Flash Programming Interface for High Volume Production
* Internal High-speed SRAM, Single-cycle Access at Maximum Speed
- 128 Kbytes (SAM7X512)
- 64 Kbytes (SAM7X256)
- 32 Kbytes (SAM7X128)

Applications of BAV21WS-HE3-18


Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box

Environmental & Export Classifications of BAV21WS-HE3-18

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0070

BAV21WS-HE3-18 Diode 200 V 250mA Surface Mount SOD-323


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BAV21WS-HE3-18 Diode 200 V 250mA Surface Mount SOD-323 Images

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